A model for evaluation and administration of security inobject-oriented databases

The integration of object-oriented programming concepts with databases is one of the most significant advances in the evolution of database systems. Many aspects of such a combination have been studied, but there are few models to provide security for this richly structured information. We develop an authorization model for object-oriented databases. This model consists of a set of policies, a structure for authorization rules, and algorithms to evaluate access requests against the authorization rules. User access policies are based on the concept of inherited authorization applied along the class structure hierarchy. We propose also a set of administrative policies that allow the control of user access and its decentralization. Finally, we study the effect of class structuring changes on authorization     

二过碘酸合银（Ⅲ）钾引发丙类酸甲酯在淀粉上接枝共聚合反应的研究

研究了由二过碘酸合银（Ⅲ）钾（简称Ag(Ⅲ））与可溶性淀粉组成的氧化还原体系，于碱性介质中引发淀粉的接枝共聚合反应，得到高接枝效率的接枝共聚物，测定了引发剂浓度、单体浓度、pH值和反应温度对接枝参数的影响，并探讨了引发机理。     

On the interaction impedance of the coupled cavity structure

The formula and program for calculating the total and negative first harmonic interaction impedance from the data of “large perturbation measurement” are given. This program is a part of the programs for CCTWT design.     

探讨缩聚催化剂对聚酯切片质量的影响

通过试验，分析比较了江西Sb2O3、南宁Sb2O3和大连Sb(Ac)3三种缩聚催化剂对聚酯切片质量的影响。试验结果表明，Sb(Ac)3是优良的缩聚催化剂。     

高温预析出对Al-Zn-Mg系铝合金时效硬化和应力腐蚀的影响

研究了高温固溶后降温处理工艺对中强可使预析出LC52和7039铝合金的组织、时效硬化和应力腐蚀的影响。金相观察发现,高温预析出可优先在晶界处产生,并提高随后时效状态下晶界析出相的不连续分布程度,温度降低到一定程度晶内和晶界产生大量析出。合金拉伸性能和应力腐蚀结果表明,预析出在保持强度和塑性的同时,可提高抗应力腐蚀性能。而预析出温度降低,合金强度呈下降趋势。     

Application of a multi-channel system for continuous monitoring and an early warning system.

A multi-channel continuous toxicity monitoring system developed in our laboratory, based on two-stage mini-bioreactors, was successfully implemented in the form of computer-based data acquisition. The multi-channel system consists of a series of a two-stage minibioreactor systems connected by a fiber optic probe to a luminometer, and uses genetically engineered bioluminescent bacteria for the detection of the potential toxicity from the soluble chemicals. This system can be stably and continuously operated due to the separation of the culture reactor from the test reactor and accomplish easy and long-term monitoring without system shut down by abrupt inflows of severe polluting chemicals. Four different recombinant bioluminescent bacteria were used in different channels so that the modes of the samples toxicities can be reasonably identified and evaluated based upon the response signature of each channel. The bioluminescent signatures were delivered from four channels by switching one at once, while the data is automatically logged to an IBM compatible computer. We also achieved the enhancement of the system through the manipulation of the dilution rate and the use of thermo-lux fusion strains. Finally, this system is now being implemented to a drinking water reservoir and river for remote sensing as an early warning system.     

Effects of hot-carrier stress on high performance polycrystalline silicon thin film transistor with a single perpendicular grain boundary

This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower.